| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which reduces humps, a semiconductor device having reduced humps, and a resist application apparatus. <P>SOLUTION: An inactive liquid 64a such as pure water is discharged from a hump processing liquid discharge nozzle 55 at a predetermined pressure to be sprayed onto a region where a hump 3a occurs while a semiconductor substrate 1 is being rotated. The hump 3a is crushed by the high pressure inactive liquid 64a sprayed thereon, and the film thickness of a lower layer resist material film 3 becomes substantially uniform on an entire surface of the semiconductor substrate 1. <P>COPYRIGHT: (C)2012,JPO&INPIT |
