| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser element which ensures stabilized TM mode oscillation suitable for high output. <P>SOLUTION: A semiconductor laser element 70 is provided with a ridge stripe 30 including a second p-type clad layer formed in ridge stripe. An n-type current constriction layer 6 is formed on the side surfaces of the ridge stripe 30. A ridge bottom width W1, i.e. the width of a surface on the first p-type clad layer 17 side in the second p-type clad layer 19 is 3.0 μm or more and 4.5 μm or less, and a ridge top width W2, i.e. the width of a surface on the reverse side of the first p-type clad layer 17 side in the second p-type clad layer 19 is 2.0 μm or more. <P>COPYRIGHT: (C)2012,JPO&INPIT |
