| 摘要 |
<P>PROBLEM TO BE SOLVED: To inhibit nitrogen discharged from a metal nitride film from reaching a gate insulator. <P>SOLUTION: A semiconductor device includes a semiconductor substrate 100, a first gate insulator 110, a second silicon-containing gate insulator 122, and a first gate electrode. The first gate insulator 110 is formed on the semiconductor substrate 100 and is composed of a material having a relative dielectric constant higher than oxide silicon or silicon oxynitride. The second silicon-containing gate insulator 122 is formed on the first gate insulator 110. The first gate electrode is formed on the second silicon-containing gate insulator 122 and has a metal nitride film 124. A part of pMOSFET is composed of the first gate insulator 110, the second silicon-containing gate insulator 122, and the metal nitride film 124. <P>COPYRIGHT: (C)2012,JPO&INPIT |
