| 摘要 |
<P>PROBLEM TO BE SOLVED: To appropriately adjust the state of ion implantation in a semiconductor substrate. <P>SOLUTION: According to an embodiment, there is provided a method of manufacturing a semiconductor device. The method of manufacturing a semiconductor device includes a detection step, a calculation step, and an adjustment step. In the detection step, a beam shape, which is a cross-sectional shape of an ion beam applied to the semiconductor substrate, and a beam current of the ion beam are detected. In the calculation step, a beam current density, which is the beam current per unit area, is calculated based on the beam shape and the beam current detected in the detection step. In the adjustment step, the ion beam is adjusted based on the beam current density calculated in the calculation step. <P>COPYRIGHT: (C)2012,JPO&INPIT |
