| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a cleaning liquid for a semiconductor substrate, which efficiently removes contamination without damaging the surface of a substrate after having been subjected to a CMP step of polishing a silicon oxide film and exposing a polysilicon film when the polishing step has finished, and to provide a cleaning method of the semiconductor substrate using the same. <P>SOLUTION: The substrate is adjusted, which has a polysilicon film and the silicon oxide film that covers at least one part of a polysilicon layer, and the silicon oxide film is polished by using a CMP polishing liquid containing polishing particles until at least one part of the polysilicon layer is exposed to the outside. The cleaning liquid for the semiconductor substrate is a cleaning liquid which cleans the face having been polished of the substrate, and includes a nonionic surfactant having at least one acetylenic linkage in a molecule, and water. <P>COPYRIGHT: (C)2012,JPO&INPIT |
