发明名称 |
INTEGRATED CIRCUIT DEVICE WITH SERIES-CONNECTED FIELD EFFECT TRANSISTORS AND INTEGRATED VOLTAGE EQUALIZATION AND METHOD OF FORMING THE DEVICE |
摘要 |
Disclosed is an integrated circuit device having series-connected planar or non-planar field effect transistors (FETs) with integrated voltage equalization and a method of forming the device. The series-connected FETs comprise gates positioned along a semiconductor body to define the channel regions for the series-connected FETs. Source/drain regions are located within the semiconductor body on opposing sides of the channel regions such that each portion of the semiconductor body between adjacent gates comprises one source/drain region for one field effect transistor abutting another source/drain region for another field effect transistor. Integrated voltage equalization is achieved through a conformal conductive layer having a desired resistance and positioned over the series-connected FETs such that it is electrically isolated from the gates, but in contact with the source/drain regions within the semiconductor body. |
申请公布号 |
US2012208329(A1) |
申请公布日期 |
2012.08.16 |
申请号 |
US201213455176 |
申请日期 |
2012.04.25 |
申请人 |
BRYANT ANDRES;NOWAK EDWARD J.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BRYANT ANDRES;NOWAK EDWARD J. |
分类号 |
H01L21/84;H01L21/8234 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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