SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent an oxide semiconductor from being thinner by passing through an insulating layer and adding a dopant to the oxide semiconductor. CONSTITUTION: A gate isolation layer(104) is formed on a gate electrode. An oxide semiconductor layer(103) has crystallinity. The oxide semiconductor layer is formed on a gate isolation layer. An insulating layer(107) is formed on the oxide semiconductor layer. The oxide semiconductor layer includes a first oxide semiconductor region and a pair of second oxide semiconductor regions.