发明名称 FLARE VALUE CALCULATION METHOD, FLARE CORRECTION METHOD, FLARE VALUE CALCULATION PROGRAM, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To calculate an exact flare value in a short time. <P>SOLUTION: According to an embodiment, there is provided a flare value calculation method. In the flare value calculation method, an average light intensity in the case of performing exposure processing to a substrate using a mask pattern group in which mask patterns created with two or more kinds of sizes are arranged is calculated for every above-mentioned mask pattern. Then, an amount of pattern correction to the mask patterns according to information with regard to the size of the mask patterns and the average light intensity is calculated for every mask pattern. Then, mask patterns after correcting are created for every mask pattern by performing pattern correction to the mask patterns using the amount of the pattern correction for every mask pattern. Then, a flare value of a projection optical system included in an exposure device is calculated using pattern mean density of the mask patterns after correcting. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012156441(A) 申请公布日期 2012.08.16
申请号 JP20110016414 申请日期 2011.01.28
申请人 TOSHIBA CORP 发明人 ARISAWA YUKIYASU;UNO TAIGA
分类号 H01L21/027;G03F1/70;G03F7/20 主分类号 H01L21/027
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