发明名称 |
FIELD EFFECT TRANSISTOR WITH NARROW BANDGAP SOURCE AND DRAIN REGIONS AND METHOD OF FABRICATION |
摘要 |
A transistor having a narrow bandgap semiconductor source/drain region is described. The transistor includes a gate electrode formed on a gate dielectric layer formed on a silicon layer. A pair of source/drain regions are formed on opposite sides of the gate electrode wherein said pair of source/drain regions comprise a narrow bandgap semiconductor film formed in the silicon layer on opposite sides of the gate electrode.
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申请公布号 |
US2012205729(A1) |
申请公布日期 |
2012.08.16 |
申请号 |
US201213453403 |
申请日期 |
2012.04.23 |
申请人 |
CHAU ROBERT S.;DATTA SUMAN;KAVALIEROS JACK;BRASK JUSTIN K.;DOCZY MARK L.;METZ MATTHEW |
发明人 |
CHAU ROBERT S.;DATTA SUMAN;KAVALIEROS JACK;BRASK JUSTIN K.;DOCZY MARK L.;METZ MATTHEW |
分类号 |
H01L29/772 |
主分类号 |
H01L29/772 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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