| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a liquid processing method in which an etching rate is large, and an etching selection ratio of a silicon nitride is higher than that of a silicon oxide; a liquid processing apparatus; and a storage medium storing the method. <P>SOLUTION: When etching a substrate from which a silicon nitride and a silicon oxide are exposed by an etching solution, this liquid processing method includes: preparing the etching solution by mixing a fluorine ion source, water and a boiling point regulating agent; maintaining a temperature of the etching solution to a temperature of 140°C or higher for a predetermined time so that an etching rate of the silicon nitride becomes 100 Å/minute or more and a ratio of the etching rate of the silicon nitride to the etching rate of the silicon oxide becomes 75 or more, when etching the substrate by the etching solution; and then etching the substrate by the etching solution. <P>COPYRIGHT: (C)2012,JPO&INPIT |
