METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To remove impurities including an oxide on a surface of a semiconductor before etching or laminating other layers.

SOLUTION: A method of manufacturing a semiconductor device comprises a first sacrificial layer formation step to form a first sacrificial layer which is in contact with at least a part of a first semiconductor layer 110, and the solid solubility of impurities included in the first semiconductor layer 110 is higher than that of the first semiconductor layer 110. The manufacturing method also comprises: an annealing step to anneal the first sacrificial layer and the first semiconductor layer; a removing step to remove the first sacrificial layer by a wet process; at least one of the steps of forming an insulator layer 120 covering at least a part of the first semiconductor layer and etching a part of the first semiconductor layer; and an electrode formation step to form an electrode layer 126 which is electrically connected to the first semiconductor layer.

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