Fractal interconnects for neuro-electronic interfaces and implants using same

摘要

A neuro-electronic interface device has a micro-electrode electrically connected to an interconnect that has scaling gradients between 1.1 and 1.9 over a scaling range of at least one order of magnitude. The device preferably has an array of such fractal interconnects in electrical contact with an array of micro-electrodes. Such fractal interconnect arrays may be components of implants including a retinal implant device having an array of photodetectors in electrical contact with the array of micro-electrodes. The interconnects may be fabricated by forming nanoscale particles and depositing them onto a non-conductive surface that is smooth except for electrodes which serve as nucleation sites for the formation of fractal interconnect structures through diffusion limited aggregation.