METHOD AND APPARATUS FOR THERMAL ANALYSIS OF THROUGH-SILICON VIA (TSV)

摘要

Some embodiments of the invention provide a method for performing thermal analysis of an integrated circuit (“IC”) design layout. The IC design layout includes several wiring layers in some embodiments. The IC design layout includes a substrate that has at least one through-silicon via (“TSV”). The method divides the IC design layout into a set of elements. The method identifies a temperature distribution for the IC design layout by using the set of elements. In some embodiments, at least one element includes a metal component and a non-metal component. The non-metal component is silicon in some embodiments, and a dielectric in other embodiments.