| 摘要 |
A pressure sensor 1 comprises a semiconductor substrate 10, insulating layers 21, 22, 23 formed on the semiconductor substrate 10, a semiconductor layer 30 formed on the semiconductor substrate 10 with the insulating layers 21, 23 intervening therebetween, and a cavity portion 13 provided between the semiconductor substrate 10 and the semiconductor layer 30. The portion of the semiconductor layer 30 which overlaps the cavity portion 13 as viewed in a lamination direction serves as a movable portion 31. The cavity portion 13 is surrounded by the insulating layers 22, 23. With this arrangement, the pressure sensor 1 can be manufactured easily with high precision. |
