| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a cleaning method which allows the processing in a short time while it enables the reduction in damage to a part or component in a chamber in cleaning a plasma CVD deposition system by removing an accumulation deposited inside a plasma CVD deposition system. <P>SOLUTION: The cleaning method comprises: performing the cleaning by making plasma of fluorine gas in a mixed gas. The mixed gas contains a fluorine-containing gas which contains nitrogen gas as a main component, and 10-20 vol.% of fluorine gas, and helium gas which is added so that the flow ratio thereof falls in a range of 1:0.1 to 1:1. <P>COPYRIGHT: (C)2012,JPO&INPIT |
