| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method capable of improving the yield of a semiconductor device. <P>SOLUTION: By washing the side face of an etching mask formation groove by wet etching using ammonia water, a polymer adhered to the side face of the etching mask formation groove at the time of anisotropic dry etching is removed before depositing a bottom electrode formation metal film which is a base material for a bottom electrode and an etching mask. Next, the etching mask is formed by depositing the bottom electrode formation metal film on the etching mask formation groove. Thereafter, a fourth interlayer insulating film formed in a memory cell region is selectively removed by wet etching using the etching mask as a mask. <P>COPYRIGHT: (C)2012,JPO&INPIT |
