发明名称 PROCESS KIT FOR RF PHYSICAL VAPOR DEPOSITION
摘要 Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region.
申请公布号 US2012205241(A1) 申请公布日期 2012.08.16
申请号 US201213457438 申请日期 2012.04.26
申请人 YOUNG DONNY;HAWRYLCHAK LARA;APPLIED MATERIALS, INC. 发明人 YOUNG DONNY;HAWRYLCHAK LARA
分类号 C23C14/34 主分类号 C23C14/34
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