发明名称 |
ATOMIC LAYER DEPOSITION USING RADICALS OF GAS MIXTURE |
摘要 |
Performing atomic layer deposition (ALD) using radicals of a mixture of nitrogen compounds to increase the deposition rate of a layer deposited on a substrate. A mixture of nitrogen compound gases is injected into a radical reactor. Plasma of the compound gas is generated by applying voltage across two electrodes in the radical reactor to generate radicals of the nitrogen compound gases. The radicals are injected onto the surface of a substrate previously injected with source precursor. The radicals function as a reactant precursor and deposit a layer of material on the substrate.
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申请公布号 |
US2012207948(A1) |
申请公布日期 |
2012.08.16 |
申请号 |
US201213369717 |
申请日期 |
2012.02.09 |
申请人 |
LEE SANG IN;SYNOS TECHNOLOGY, INC. |
发明人 |
LEE SANG IN |
分类号 |
C23C16/455;C23C16/50 |
主分类号 |
C23C16/455 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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