| 摘要 |
[Problem] To improve the reliability at which a bonding wire for semiconductors that is used in high-temperature and high-humidity environments is bonded to an aluminum pad. [Solution] A ternary-alloy-based wire comprising 4-10 mass% of gold having a purity equal to or greater than 99.999 mass%, and 2-5 mass% of palladium having a purity equal to or greater than 99.99 mass%, the remainder being constituted by silver having a purity equal to or greater than 99.999 mass%. The bonding wire for semiconductors contains 15-70 wt ppm of an oxidizing non-noble metal j element, and is subjected to an annealing heat treatment before being continuously drawn using a die, to a refining heat treatment after being continuously drawn using a die, and to ball-bonding in a nitrogen atmosphere. Corrosion between an Ag2Al intermetallic compound layer and the Ag-Au-Pd ternary alloy wire at the bonding interface between an aluminum pad and the wire is inhibited by Au2Al and a Pd-rich layer. |
