NAND DEVICES HAVING A FLOATING GATE COMPRISING A FIN PORTION INTERDIGITATED WITH THE CONTROL GATE AND METHOD OF MANUFACTURING THE SAME
摘要
A NAND device including a source, a drain and a channel located between the source and drain. The NAND device also includes a plurality of floating gates (110A) located over the channel and a plurality of electrically conducting fins (122). Each of the plurality of electrically conducting fins is located over one of the plurality of floating gates. The plurality of electrically conducting fins include a material other than polysilicon. The NAND device also includes a plurality of control gates (152,127). Each of the plurality of control gates is located adjacent to each of the plurality of floating gates and each of the plurality of electrically conducting fins.
申请公布号
WO2012087820(A3)
申请公布日期
2012.08.16
申请号
WO2011US65472
申请日期
2011.12.16
申请人
SANDISK TECHNOLOGIES INC.;ALSMEIER, JOHANN;PURAYATH, VINOD;KAI, JAMES;MATAMIS, GEORGE
发明人
ALSMEIER, JOHANN;PURAYATH, VINOD;KAI, JAMES;MATAMIS, GEORGE