发明名称 TRIBOELECTRIC CHARGE CONTROLLED ELECTRO-STATIC CLAMP
摘要 <p>An electrostatic clamp which more effectively removes built up charge from a substrate prior to removal is disclosed. Currently, the lift pins and the ground pins are the only mechanism used to remove charge from the substrate after implantation. The present discloses describes an electrostatic chuck In which the top dielectric surface has an embedded conductive region, such as a ring shaped conductive region in the sealing ring. Thus, regardless of the orientation of the substrate during release, at least a portion of the substrate will contain the conductive region on the dielectric layer of the workpiece support. This conductive region may be connected to ground through the use of conductive vias in the dielectric layer. In some embodiments, these conductive vias are the fluid conduits used to supply gas to the back side of the substrate.</p>
申请公布号 WO2012109071(A1) 申请公布日期 2012.08.16
申请号 WO2012US23481 申请日期 2012.02.01
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.;BLAKE, JULIAN, G.;STONE, DALE, K.;STONE, LYUDMILA;SUURONEN, DAVID, E.;OSHIRO, SHIGEO 发明人 BLAKE, JULIAN, G.;STONE, DALE, K.;STONE, LYUDMILA;SUURONEN, DAVID, E.;OSHIRO, SHIGEO
分类号 H01L21/683 主分类号 H01L21/683
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