SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A SiC device includes an inversion type MOSFET having: a substrate (1), a drift layer (2), and a base region (3) stacked in this order; source and contact regions (4, 5) in upper portions of the base region (3); a trench (6) penetrating the source and base regions (4, 3); a gate electrode (9) on a gate insulating film (8) in the trench (6); a source electrode (11) coupled with the source and base region (4, 3); a drain electrode (13) on a back of the substrate (1); and multiple deep layers (10) in an upper portion of the drift layer (2) deeper than the trench (6) and extending in a direction, which crosses the longitudinal direction of the trench. Each deep layer (10) has an impurity concentration distribution in a depth direction, and an inversion layer is provided in a portion of the deep layer (10) on the side of the trench (6) under application of the gate voltage.