| 摘要 |
Semiconductor device comprises a semiconductor component (12), especially a power laser diode billet, arranged on a cooling element (20). The cooling element contains a channel (26) for introducing a coolant and has microstructures in a region (32) for effective heat transfer to the coolant. The semiconductor component is completely overlapped by the region of the cooling channel having the microstructures and an intermediate support (16) is arranged on the cooling element so that it compensates for the different thermal expansions on the component and stresses arising on the cooling element between the component and cooling element. Preferably the intermediate support has a high elastic modulus and a high heat conductivity, preferably 1.5 times higher than copper. The component is joined to the intermediate support using a hard solder (14), preferably made from a gold-tin (AuSn) solder. The intermediate support is made from molybdenum (Mo), tungsten (W), a copper-molybdenum (CuMo) alloy or a copper-tungsten (CuW) alloy, or a diamond-metal matrix containing diamond-Cu, diamond-cobalt (Co) or diamond-aluminium (Al). |
