发明名称 REPAIRING AND RESTORING STRENGTH OF ETCH-DAMAGED LOW-K DIELECTRIC MATERIALS
摘要 A PROCESS OF REPAIRING A PLASMA ETCHED LOW-K DIELECTRIC MATERIAL HAVING SURFACE-BOUND SILANOL GROUPS INCLUDES EXPOSING AT LEAST ONE SURFACE OF THE DIELECTRIC MATERIAL TO (A) A CATALYST SO AS TO FORM HYDROGEN BONDS BETWEEN THE CATALYST AND THE SURFACE-BOUND SILANOL GROUPS OBTAINING A CATALYTIC INTERMEDIARY THAT REACTS WITH THE SILANE CAPPING AGENT SO AS TO FORM SURFACE-BOUND SILANE COMPOUNDS, OR (B) A SOLUTION COMPRISING A SUPERCRITICAL SOLVENT, A CATALYST, AND A SILANE CAPPING AGENT SO AS TO FORM HYDROGEN BONDS BETWEEN A CATALYST AND THE SURFACE-BOUND SILANOL GROUPS OBTAINING A CATALYTIC INTERMEDIARY THAT REACTS WITH THE SILANE CAPPING AGENT SO AS TO FORM SURFACE-BOUND SILANE COMPOUNDS. HORIZONTAL NETWORKS CAN BE FORMED BETWEEN ADJACENT SURFACE-BOUND SILANE COMPOUNDS. THE DIELECTRIC MATERIAL CAN BE FURTHER TREATED WITH AN ORGANIC ACID SO AS TO CATALYZE A HYDROLYTIC REACTION WITH ALKOXY GROUPS ON THE SURFACE-BOUND SILANE COMPOUNDS FORMING SILANOL GROUPS THAT CAN BE CONDENSED VIA HEAT TO REMOVE WATER AS A BYPRODUCT.
申请公布号 MY146528(A) 申请公布日期 2012.08.15
申请号 MY2008PI05122 申请日期 2007.06.21
申请人 LAM RESEARCH CORPORATION 发明人 DEYOUNG, JAMES
分类号 B05D3/00 主分类号 B05D3/00
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