发明名称 |
Integrated decoupling capacitor employing conductive through-substrate vias |
摘要 |
A capacitor (180) in a semiconductor substrate (10) employs a conductive through-substrate via (TSV) (80) as an inner electrode and a columnar doped semiconductor region as an outer electrode. The capacitor (80) provides a large decoupling capacitance in a small area, and does not impact circuit density or a Si3D structural design. Additional conductive TSVs can be provided in the semiconductor substrate (10) to provide electrical connection for power supplies and signal transmission therethrough. The capacitor (180) has a lower inductance than a conventional array of capacitors having comparable capacitance, thereby enabling reduction of high frequency noise in the power supply system of stacked semiconductor chips. |
申请公布号 |
GB2488078(A) |
申请公布日期 |
2012.08.15 |
申请号 |
GB20120009593 |
申请日期 |
2010.11.09 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
MICHAEL MCALLISTER;MICHAEL J SHAPIRO;TAE HONG KIM;EDMUND J SPROGIS |
分类号 |
H01L21/822;H01L21/768;H01L23/522;H01L23/64;H01L27/06 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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