Method for obtaining a network of nanometric terminals

摘要

The method involves depositing a silicon layer on a substrate that is formed of a base substrate or a P-type upper layer (100) mounted in a silicon oxide layer (132). A self-organized layer is formed above the silicon layer. Patterns are formed in the self-organized layer and in a neutralization layer. A hard mask e.g. aluminum cylindrical pattern, is formed by transfer of the patterns and by depositing a masking layer in the patterns. Silicon terminals are obtained in the silicon layer by etching with the hard mask. The silicon terminals are siliconized by depositing a metal layer.