发明名称 Error recovery storage along a nand-flash string
摘要 Apparatus and methods store error recovery data in different dimensions of a memory array. For example, in one dimension, block error correction codes (ECC) are used, and in another dimension, supplemental error correction codes, such as convolutional codes, are used. By using separate dimensions, the likelihood that a defect affects both error recovery techniques is lessened, thereby increasing the probability that error recovery can be performed successfully. In one example, block error correction codes are used for data stored along rows, and this data is stored in one level of multiple-level cells of the array. Supplemental error correction codes are used for data stored along columns, such as along the cells of a string, and the supplemental error correction codes are stored in a different level than the error correction codes.
申请公布号 US8245100(B2) 申请公布日期 2012.08.14
申请号 US201113267262 申请日期 2011.10.06
申请人 RADKE WILLIAM H.;MICRON TECHNOLOGY, INC. 发明人 RADKE WILLIAM H.
分类号 H03M13/00 主分类号 H03M13/00
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