发明名称 |
Semiconductor device having CMP dummy pattern |
摘要 |
A semiconductor device including a CMP dummy pattern and a method for manufacturing the same are provided. The warpage of a wafer can be prevented by forming the CMP dummy pattern in the same direction and/or at the same angle as a pattern of a cell region. Accordingly, overlay error caused by etching residues is reduced, thereby improving the yield of the semiconductor device. |
申请公布号 |
US8242583(B2) |
申请公布日期 |
2012.08.14 |
申请号 |
US20090493080 |
申请日期 |
2009.06.26 |
申请人 |
YUNE HYOUNG SOON;AHN YEONG BAE;HYNIX SEMICONDUCTOR INC. |
发明人 |
YUNE HYOUNG SOON;AHN YEONG BAE |
分类号 |
H01L29/06;H01L21/44 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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