发明名称 Semiconductor device having CMP dummy pattern
摘要 A semiconductor device including a CMP dummy pattern and a method for manufacturing the same are provided. The warpage of a wafer can be prevented by forming the CMP dummy pattern in the same direction and/or at the same angle as a pattern of a cell region. Accordingly, overlay error caused by etching residues is reduced, thereby improving the yield of the semiconductor device.
申请公布号 US8242583(B2) 申请公布日期 2012.08.14
申请号 US20090493080 申请日期 2009.06.26
申请人 YUNE HYOUNG SOON;AHN YEONG BAE;HYNIX SEMICONDUCTOR INC. 发明人 YUNE HYOUNG SOON;AHN YEONG BAE
分类号 H01L29/06;H01L21/44 主分类号 H01L29/06
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