发明名称 |
Compound semiconductor device |
摘要 |
A compound semiconductor device includes: an electron transit layer made of GaN; a channel layer made of AlGaN; a source electrode, a gate electrode and a drain electrode that are provided on the channel layer; a cap layer that is provided at least between the source electrode and the gate electrode and between the gate electrode and the drain electrode and is made of GaN; a recess portion that is provided in the cap layer between the gate electrode and the drain electrode; and a thick portion that is provided in the cap layer between the recess portion and the drain electrode and has a thickness larger than the recess portion. |
申请公布号 |
US8242512(B2) |
申请公布日期 |
2012.08.14 |
申请号 |
US20110987426 |
申请日期 |
2011.01.10 |
申请人 |
YAMAKI FUMIKAZU;INOUE KAZUTAKA;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
YAMAKI FUMIKAZU;INOUE KAZUTAKA |
分类号 |
H01L29/15;H01L31/0312 |
主分类号 |
H01L29/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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