发明名称 |
Method of forming an organic semiconducting device by a melt technique |
摘要 |
The present invention provides a method of forming a semiconducting device comprising an organic semiconducting material, which method comprises: heating a composition comprising the organic semiconducting material to a temperature at or above the melting point or glass transition temperature of the composition to form a melt; cooling the melt to a temperature below the melting point or glass transition temperature of the composition; and wherein a first substance or object capable of inhibiting and/or preventing dewetting is adjacent the composition before or during heating, or the composition further comprises an agent capable of inhibiting and/or preventing dewetting. |
申请公布号 |
US8241946(B2) |
申请公布日期 |
2012.08.14 |
申请号 |
US20050568192 |
申请日期 |
2005.04.22 |
申请人 |
SETAYESH SEPAS;DE LEEUW DAGOBERT M.;STUTZMANN-STINGELIN NATALIE;CREATOR TECHNOLOGY B.V. |
发明人 |
SETAYESH SEPAS;DE LEEUW DAGOBERT M.;STUTZMANN-STINGELIN NATALIE |
分类号 |
H01L51/40;H01L29/08;H01L51/00;H01L51/05;H01L51/30 |
主分类号 |
H01L51/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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