发明名称 Method of forming an organic semiconducting device by a melt technique
摘要 The present invention provides a method of forming a semiconducting device comprising an organic semiconducting material, which method comprises: heating a composition comprising the organic semiconducting material to a temperature at or above the melting point or glass transition temperature of the composition to form a melt; cooling the melt to a temperature below the melting point or glass transition temperature of the composition; and wherein a first substance or object capable of inhibiting and/or preventing dewetting is adjacent the composition before or during heating, or the composition further comprises an agent capable of inhibiting and/or preventing dewetting.
申请公布号 US8241946(B2) 申请公布日期 2012.08.14
申请号 US20050568192 申请日期 2005.04.22
申请人 SETAYESH SEPAS;DE LEEUW DAGOBERT M.;STUTZMANN-STINGELIN NATALIE;CREATOR TECHNOLOGY B.V. 发明人 SETAYESH SEPAS;DE LEEUW DAGOBERT M.;STUTZMANN-STINGELIN NATALIE
分类号 H01L51/40;H01L29/08;H01L51/00;H01L51/05;H01L51/30 主分类号 H01L51/40
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