发明名称 |
Thin film type varistor and a method of manufacturing the same |
摘要 |
A thin film type varistor and a method of manufacturing the same are provided. The method includes: a depositing a first zinc oxide thin film at a low temperature through a sputtering method; and a forming a zinc oxide thin film for a varistor by treating the first zinc oxide thin film with heat at a low temperature in an environment in which an inert gas and oxygen are injected. Accordingly, it is possible to lower a processing temperature and simplify a manufacturing process while maintaining a varistor characteristic so as to be applied to a highly integrated circuit. |
申请公布号 |
US8242875(B2) |
申请公布日期 |
2012.08.14 |
申请号 |
US20080740624 |
申请日期 |
2008.08.20 |
申请人 |
LIM JUNG WOOK;KIM JUN KWAN;YUN SUN JIN;KIM HYUN TAK;ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
LIM JUNG WOOK;KIM JUN KWAN;YUN SUN JIN;KIM HYUN TAK |
分类号 |
H01C7/10 |
主分类号 |
H01C7/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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