发明名称 |
Epitaxial wafer and production method thereof |
摘要 |
The epitaxial layer defects generated from voids of a silicon substrate wafer containing added hydrogen are suppressed by a method for producing an epitaxial wafer by: growing a silicon crystal by the Czochralski method comprising adding hydrogen and nitrogen to a silicon melt and growing from the silicon melt a silicon crystal having a nitrogen concentration of from 3×1013 cm−3 to 3×1014 cm−3, preparing a silicon substrate by machining the silicon crystal, and forming an epitaxial layer at the surface of the silicon substrate. |
申请公布号 |
US8241421(B2) |
申请公布日期 |
2012.08.14 |
申请号 |
US20100895950 |
申请日期 |
2010.10.01 |
申请人 |
NAKAI KATSUHIKO;MUELLER TIMO;IKARI ATSUSHI;VON AMMON WILFRIED;WEBER MARTIN;SILTRONIC AG |
发明人 |
NAKAI KATSUHIKO;MUELLER TIMO;IKARI ATSUSHI;VON AMMON WILFRIED;WEBER MARTIN |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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