| 摘要 |
839,636. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. Aug. 7, 1956 [Aug. 10, 1955], No. 24209/56. Class 37. A method of making a PN junction device comprises heating an activator metal characteristic of one conductivity type in contact with a semi-conductor body of the opposite conductivity to form a PN junction with an overlying metal layer, coating a heat sink with solder, placing the metal layer and solder in contact, with an insulating spacer at least partially surrounding the layer, and heating the heat sink to fuse it to the entire surface of the layer. In the embodiment a mass of indium or zinc is alloyed to one face of an N- type Ge body 1 to form a P-type zone beneath the surface overlain by a projecting region of alloy material 6 which serves as emitter in the finished transistor. An apertured plate 2 of copper or nickel is ohmically connected to the opposite face of the body and a collector electrode 4 of tungsten or phosphor bronze wire forms an electroformed point contact with the body in the aperture. The projecting alloy material is connected to a copper heat sink 8 by providing the latter with a layer of solder 9, bringing it into contact with the alloy as shown and then heating the sink sufficiently to melt the solder and the alloy surface to form a rigid bond. The process is facilitated by the use of the insulating spacer 11 which at least partly surrounds the alloy as shown. |
