发明名称 |
Method of manufacturing a semiconductor device |
摘要 |
A semiconductor device includes a thin film transistor. The thin film transistor includes a semiconductor film over a substrate, in which the semiconductor film includes a pair of first regions, a pair of second regions interposed between the pair of first regions, and a channel formation region interposed between the pair of second regions. A concentration of an impurity in the pair of second regions is smaller than a concentration of the impurity in the pair of first regions. The thin film transistor includes an insulating film, in which a portion of the insulating film is provided over the semiconductor film. The thin film transistor includes a conductive film over the portion, and the conductive film includes a taper shape. |
申请公布号 |
US8242508(B2) |
申请公布日期 |
2012.08.14 |
申请号 |
US201113226803 |
申请日期 |
2011.09.07 |
申请人 |
HAMADA TAKASHI;ARAI YASUYUKI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
HAMADA TAKASHI;ARAI YASUYUKI |
分类号 |
H01L29/04;H01L29/786;G02F1/1362;H01L21/77;H01L21/84;H01L27/01;H01L27/12;H01L29/423;H01L31/036;H01L31/0376 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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