发明名称 |
Storage element, method of manufacturing same, and semiconductor storage device |
摘要 |
Disclosed herein is a storage element including: a first electrode; a second electrode formed in a position opposed to the first electrode; and a variable-resistance layer formed so as to be interposed between the first electrode and the second electrode. The first electrode is a tubular object, and is formed so as to be thicker on an opposite side from the variable-resistance layer than on a side of the variable-resistance layer.
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申请公布号 |
US8242552(B2) |
申请公布日期 |
2012.08.14 |
申请号 |
US20100729664 |
申请日期 |
2010.03.23 |
申请人 |
SUMINO JUN;SONY CORPORATION |
发明人 |
SUMINO JUN |
分类号 |
H01L47/00;H01L21/20 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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