发明名称 |
Semiconductor surrounding gate transistor device and production method therefor |
摘要 |
The method includes the steps of: forming a planar semiconductor layer on an oxide film formed on a substrate and then forming a pillar-shaped first-conductive-type semiconductor layer on the planar semiconductor layer; forming a second-conductive-type semiconductor layer in a portion of the planar semiconductor layer underneath the pillar-shaped first-conductive-type semiconductor layer; forming a gate dielectric film and a gate electrode made of a metal, around the pillar-shaped first-conductive-type semiconductor layer; forming a sidewall-shaped dielectric film on an upper region of a sidewall of the pillar-shaped first-conductive-type semiconductor layer and in contact with a top of the gate electrode; forming a sidewall-shaped dielectric film on a sidewall of the gate electrode; forming a second-conductive-type semiconductor layer in an upper portion of the pillar-shaped first-conductive-type semiconductor layer. |
申请公布号 |
US8241976(B2) |
申请公布日期 |
2012.08.14 |
申请号 |
US20100704000 |
申请日期 |
2010.02.11 |
申请人 |
MASUOKA FUJIO;KUDO TOMOHIKO;ARAI SHINTARO;NAKAMURA HIROKI;UNISANTIS ELECTRONICS SINGAPORE PTE LTD. |
发明人 |
MASUOKA FUJIO;KUDO TOMOHIKO;ARAI SHINTARO;NAKAMURA HIROKI |
分类号 |
H01L21/8232 |
主分类号 |
H01L21/8232 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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