发明名称 |
Nonvolatile memory device with multiple blocking layers and method of fabricating the same |
摘要 |
A nonvolatile memory device with a blocking layer controlling the transfer of electric charges in a charge storage layer includes the blocking layer having a first blocking layer in contact with the charge storage layer and a second blocking layer over the first blocking layer, wherein the first blocking layer has a greater energy band gap than the second blocking layer and the second blocking layer has a greater permittivity than the first blocking layer. |
申请公布号 |
US8241974(B2) |
申请公布日期 |
2012.08.14 |
申请号 |
US201113166273 |
申请日期 |
2011.06.22 |
申请人 |
CHO HEUNG-JAE;JOO MOON-SIG;KIM YONG-SOO;CHOI WON-JOON;HYNIX SEMICONDUCTOR INC. |
发明人 |
CHO HEUNG-JAE;JOO MOON-SIG;KIM YONG-SOO;CHOI WON-JOON |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|