发明名称 |
Method of manufacturing semiconductor device having integrated MOSFET and Schottky diode |
摘要 |
A semiconductor device having integrated MOSFET and Schottky diode includes a substrate having a MOSFET region and a Schottky diode region defined thereon; a plurality of first trenches formed in the MOSFET region; and a plurality of second trenches formed in the Schottky diode region. The first trenches respectively including a first insulating layer formed over the sidewalls and bottom of the first trench and a first conductive layer filling the first trench serve as a trenched gate of the trench MOSFET. The second trenches respectively include a second insulating layer formed over the sidewalls and bottom of the second trench and a second conductive layer filling the second trench. A depth and a width of the second trenches are larger than that of the first trenches; and a thickness of the second insulating layer is larger than that of the first insulating layer.
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申请公布号 |
US8241978(B2) |
申请公布日期 |
2012.08.14 |
申请号 |
US20090536504 |
申请日期 |
2009.08.06 |
申请人 |
LIN WEI-CHIEH;LIN LI-CHENG;HSU HSIN-YU;CHEN HO-TAI;YEH JEN-HAO;YANG GUO-LIANG;CHEN CHIA-HUI;HUNG SHIH-CHIEH;ANPEC ELECTRONICS CORPORATION |
发明人 |
LIN WEI-CHIEH;LIN LI-CHENG;HSU HSIN-YU;CHEN HO-TAI;YEH JEN-HAO;YANG GUO-LIANG;CHEN CHIA-HUI;HUNG SHIH-CHIEH |
分类号 |
H01L27/06;H01L21/336 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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