| 摘要 |
A method of performing a writing operation of a nonvolatile memory device is provided. The method includes performing a first band program using trim information from a first band register of multiple band registers, which include at least a default band register; and performing a second band program using trim information from a second band register or trim information from the default band register after performing the first band program. The second band register is selected while the first band program is being performed. |
