| 发明名称 |
Oxide semiconductor and thin film transistor including the same |
| 摘要 |
An oxide semiconductor and a thin film transistor (TFT) including the same. The oxide semiconductor may be obtained by adding hafnium (Hf) to gallium-indium-zinc oxide (GIZO) and may be used as a channel material of the TFT. |
| 申请公布号 |
US8242504(B2) |
申请公布日期 |
2012.08.14 |
| 申请号 |
US20090453977 |
申请日期 |
2009.05.28 |
| 申请人 |
KIM CHANGJUNG;KIM SANGWOOK;KIM SUNIL;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM CHANGJUNG;KIM SANGWOOK;KIM SUNIL |
| 分类号 |
H01L29/26 |
主分类号 |
H01L29/26 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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