发明名称 Method of manufacturing semiconductor device and semiconductor manufacturing apparatus
摘要 A method of manufacturing a semiconductor device having a process for cleaning a semiconductor substrate after the semiconductor substrate is etched for patterning includes a first process of preparing the semiconductor substrate having a first temperature, a second process of setting the semiconductor substrate at a second temperature, a third process of etching the semiconductor substrate having the second temperature by etching liquid having a third temperature, a fourth process of cleaning the semiconductor substrate to which the etching liquid is adhered, by ultrapure water having a fourth temperature, wherein the second temperature is set at the range between the first and the third temperatures.
申请公布号 US8241515(B2) 申请公布日期 2012.08.14
申请号 US20080073983 申请日期 2008.03.12
申请人 OHMURO KAZUHIKO;IZUMI TAKAYUKI;SHIGEMASA RYOJI;OHSHIMA TOMOYUKI;OKI SEMICONDUCTOR CO., LTD. 发明人 OHMURO KAZUHIKO;IZUMI TAKAYUKI;SHIGEMASA RYOJI;OHSHIMA TOMOYUKI
分类号 B44C1/22;C03C15/00;C03C25/68;C23F1/00 主分类号 B44C1/22
代理机构 代理人
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