| 摘要 |
A semiconductor device is manufactured by forming a first reinforcing insulating film and a first sacrificial interlayer. A first trench is formed and then filled with an interconnect covered with a cap metal. First and second sacrificial barrier dielectrics are formed, and the second sacrificial interlayer and the sacrificial barrier dielectric are selectively removed to form a hole exposing the cap metal. A conductive via connects the interconnect by forming a conductor in the hole, and a second cap metal covers the via. The interconnect exposes the via by selectively removing the sacrificial interlayers and dielectric. An insulating film covers the side wall and the upper portion of the interconnect, and the side wall of the conductive via which is connected to the interconnect from the side wall of the interconnect through the side wall of the via. An air-gap is provided in the insulating film. |
