发明名称 |
Method of fabricating a deep trench (DT) metal-insulator-metal (MIM) capacitor |
摘要 |
A method includes providing an SOI substrate including a layer of silicon disposed atop a layer of an oxide, the layer of an oxide being disposed atop the semiconductor substrate; forming a deep trench having a sidewall extending through the layer of silicon and the layer of an oxide and into the substrate; depositing a continuous spacer on the sidewall to cover the layer of silicon, the layer of an oxide and a part of the substrate; depositing a first conformal layer of a conductive material throughout the inside of the deep trench; creating a silicide within the deep trench in regions extending through the sidewall into an uncovered part of the substrate; removing the first conformal layer from the continuous spacer; removing the continuous spacer; depositing a layer of a high k dielectric material throughout the inside of the deep trench, and depositing a second conformal layer of a conductive material onto the layer of a high-k dielectric material. |
申请公布号 |
US8241981(B1) |
申请公布日期 |
2012.08.14 |
申请号 |
US201113017108 |
申请日期 |
2011.01.31 |
申请人 |
KRISHNAN RISHIKESH;SHEPARD, JR. JOSEPH F.;CHUDZIK MICHAEL P.;LAVOIE CHRISTIAN;LEE DONG-ICK;KWON OH-JUNG;KWON UNOH;CHOI YOUNGJIN;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KRISHNAN RISHIKESH;SHEPARD, JR. JOSEPH F.;CHUDZIK MICHAEL P.;LAVOIE CHRISTIAN;LEE DONG-ICK;KWON OH-JUNG;KWON UNOH;CHOI YOUNGJIN |
分类号 |
H01L21/8242 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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