发明名称 |
SPLIT GATE SEMICONDUCTOR DEVICE WITH CURVED GATE OXIDE PROFILE |
摘要 |
A split gate semiconductor device includes a trench gate having a first electrode region and a second electrode region that are separated from each other by a gate oxide layer and an adjacent dielectric layer. The boundary of the gate oxide layer and the dielectric layer is curved to avoid a sharp corner where the gate oxide layer meets the sidewalls of the trench. |
申请公布号 |
KR20120089679(A) |
申请公布日期 |
2012.08.13 |
申请号 |
KR20127009758 |
申请日期 |
2010.10.21 |
申请人 |
VISHAY-SILICONIX |
发明人 |
GAO YANG;CHEN KUO IN;TERRILL KYLE;SHI SHARON |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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