| 摘要 |
<p>PURPOSE: A sputtering target, a manufacturing method of the sputtering target, and a manufacturing method of a semiconductor device are provided to increase the ratio of heavy rare gases in sputtering gas by securing a desired concentration of nitrogen in a target, thereby improving productivity in a semiconductor device manufacturing process. CONSTITUTION: A sputtering target comprises an oxynitride sintered body(11) containing two or more of indium, gallium, zinc, and tin. In the sintered body, the concentration of nitrogen is 4 atomic% or greater, the concentration of alkali metal is 5×10^16atoms/cm^3 or less, and the concentration of hydrogen is 1×10^16atoms/cm^3 or less.</p> |
