| 摘要 |
A device for determination of the instant of the of plasma etching process end comprises a laser as a source of light, condenser, rotary mirror, diaphragm and plasma reactor with plates (samples), optical window for inlet and outlet of optical radiation, photo-transducer that comprises a photo-resistor, three bipolar transistors, five resistors, two vessels and one direct voltage source. The photo-transducer comprises a second direct voltage source and an inductance. |
