摘要 |
A III-N device is described with a III-N layer, an electrode thereon, a passivation layer adjacent the III-N layer and electrode, a thick insulating layer adjacent the passivation layer and electrode, a high thermal conductivity carrier capable of transferring substantial heat away from the III-N device, and a bonding layer between the thick insulating layer and the carrier. The bonding layer attaches the thick insulating layer to the carrier. The thick insulating layer can have a precisely controlled thickness and be thermally conductive. |
申请人 |
TRANSPHORM INC.;PARIKH, PRIMIT;DORA, YUVARAJ;WU, YIFENG;MISHRA, UMESH;FICHTENBAUM, NICHOLAS |
发明人 |
PARIKH, PRIMIT;DORA, YUVARAJ;WU, YIFENG;MISHRA, UMESH;FICHTENBAUM, NICHOLAS |