| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing the same capable of improving an adhesion property between a pad and a foundation of the pad, and improving reliability. <P>SOLUTION: A semiconductor device has a lamination structure on one surface side of a semiconductor substrate 1. The lamination structure is configured by a thermal oxide film 1b, a silicon nitride film 32, an interlayer insulating film 50, and a passivation film 60. A pad 80 is formed on the thermal oxide film 1b. In a method of manufacturing the semiconductor device, a basic structure having the thermal oxide film 1b and the silicon nitride film 32 covering a part of a surface of the thermal oxide film 1b is formed on the one surface side of the semiconductor substrate 1. Then, the interlayer insulating film 50 is formed on the one surface side of the semiconductor substrate 1. At the formation of the basic structure, a part of the silicon nitride film 32, which is formed on a formation schedule region for the pad 80 in the thermal oxide film 1b, is removed. After formation of the interlayer insulating film and before formation of the pad 80, a part of the interlayer insulating film 50, which is formed on the formation schedule region for the pad 80 in the thermal oxide film 1b, is removed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
