A semiconductor chip, including a substrate; a dielectric layer over the substrate; a gate within the dielectric layer, the gate including a sidewall; a source and a drain in the substrate adjacent to the gate; a tapered contact contacting a portion of one of the source or the drain; and a sealed air gap between the sidewall and the contact.
申请公布号
US2012199886(A1)
申请公布日期
2012.08.09
申请号
US201113020107
申请日期
2011.02.03
申请人
HORAK DAVID V.;HUANG ELBERT E.;KOBURGER, III CHARLES W.;LA TULIPE, JR. DOUGLAS C.;PONOTH SHOM;INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
HORAK DAVID V.;HUANG ELBERT E.;KOBURGER, III CHARLES W.;LA TULIPE, JR. DOUGLAS C.;PONOTH SHOM