| 摘要 |
Disclosed is a semiconductor device including plural types of semiconductor elements having structures that have respective thicknesses suitable for their uses formed in the same process. A semiconductor device (100) includes a TFT (40) and a photodiode (50). A gate electrode (110) of the TFT (40) and a light-shielding layer (60) of the photodiode (50) are formed in the same process. However, because the film thickness of the gate electrode (110) is small, the breakage of an island-shaped silicon layer (120), which will be the channel layer, at the edge of the gate electrode (110) can be prevented. Also, because the film thickness of the light-shielding layer (60) is large, the light entering through a surface of a glass substrate (101) on the side opposite from the surface on which the TFT is formed can be reliably blocked by the light-shielding layer (60). Consequently, the detection sensitivity of the photodiode (50) can be increased. |
